gi850 thru gi858 vishay semiconductors formerly general semiconductor document number 88630 www.vishay.com 22-mar-02 1 fast switching plastic rectifier reverse voltage 500 to 800 v forward current 3.0 a features ?plastic package has underwriters laboratories flammability classification 94v-0 ?high surge current capability ?fast switching for high efficiency ?construction utilizes void-free molded plastic technique ?high forward current operation ?high temperature soldering guaranteed: 250?/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension mechanical data case: jedec do-201ad, molded plastic body terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: 0.04 oz., 1.1 g packaging codes/options: 1/bulk - 1.5k per container, 15k per box 4/1.4k per 13" reel, 5.6k per box 23/1k per ammo. mag., 9k per box 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) min. do-201ad dimensions in inches and (millimeters) maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol gi850 gi851 gi852 GI854 gi856 gi858 unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 v maximum rms voltage v rms 35 70 140 280 420 560 v maximum dc blocking voltage v dc 50 100 200 400 600 800 v maximum non-repetitive peak reverse voltage v rsm 75 150 250 450 650 880 v maximum average forward rectified current 0.375" (9.5mm) lead length at t a =90 c i f(av) 3.0 a peak forward surge current 8.3ms single half sine-wave superimposed on i fsm 100 a rated load (jedec method) typical thermal resistance (1) r ja 22 c/w r jl 8.0 operating junction and storage temperature range t j , t stg -50 to +150 c electrical characteristics ratings at 25 c ambient temperature unless otherwise specified. maximum instantaneous forward voltage at 3.0a v f 1.25 v 9.4a, t j =175 c 1.10 maximum dc reverse current t a =25 c 10 a at rated dc blocking voltage t a =100 c i r 150 150 200 250 300 500 maximum reverse recovery time at i f =1.0a, v r =30v, di/dt=50a/ s, i rr =10% i rm t rr 200 ns maximum reverse recovery time at i rm(rec) 2.0 a i f =1.0a, v r =30v, di/dt=50a/ s, i rr =10% i rm typical junction capacitance at 4.0v, 1mhz c j 28 pf notes: (1) thermal resistance from junction to ambient and from junction to lead at 0.375 (9.5mm) lead length, with both leads equally heat sink
gi850 thru gi858 vishay semiconductors formerly general semiconductor www.vishay.com document number 88630 2 22-mar-02 ratings and characteristic curves (t a = 25 c unless otherwise noted) temperature ( c) fig. 1 ?forward current derating curves average forward rectified current (a) fig. 3 ?typical instantaneous forward characteristics instantaneous forward voltage (v) instantaneous forward current (a) percent of rated peak reverse voltage (%) instantaneous reverse current ( a) fig. 4 ?typical reverse characteristics fig. 5 ?typical junction capacitance number of cycles at 60 h z reverse voltage (v) fig. 2 ?maximum peak forward surge current peak forward surge current (a) junction capacitance (pf) 30 70 90 110 130 150 170 2.0 6.0 8.0 4.0 0 50 1 10 100 100 200 10 t j = 150 c t j = 25 c t j = 25 c t j = 150 c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 1 10 100 0 20 40 60 80 100 0.01 1 10 0.1 1 10 100 10 100 0.8 x 0.8 x 0.40" (20 x 20 x 1m m) copper heatsinks l = lead length l = 0.25" (6.3mm) l = 0.375" (9.5mm) lead length t a = ambient temperature 0.375" (9.5mm) lead length t l = lead temperature repetitive non-repetitive pulse width = 300 s 1% duty cycle t j = 25 c t j = 100 c t j = 25 c t j = 50 c t j = 25 c f = 1.0mh z vsig = 50mvp-p 8.3ms single half sine-wave (jedec method)
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